RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(001) thin films with improved capacitance-voltage characteristics

被引:19
|
作者
Wakiya, N [1 ]
Yoshida, M [1 ]
Kiguchi, T [1 ]
Shinozaki, K [1 ]
Mizutani, N [1 ]
机构
[1] Tokyo Inst Technol, Grad Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
关键词
radio frequency sputtering; yttria-stabilized zirconia; CeO2; heteroepitaxial; C-V measurements;
D O I
10.1016/S0040-6090(02)00295-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heteroepitaxial yttria-stabilized zirconia (YSZ) and CeO2/YSZ thin films were prepared on Si(0 0 1) by radio frequency (RF)-magnetron sputtering using a combination of metal (Zr+Y), YSZ ceramic and CeO2 ceramic targets. Optimal crystallinity and minimal surface roughness were obtained for a 2-nm thick layer of metallic (Zr+Y). For YSZ thin film, a considerably large threshold hysteresis (memory window) of approximately 2.2 V was observed in the capacitance-voltage characteristics. It was clarified that the memory window can be suppressed by decreasing the thickness of YSZ. The memory window of CeO2(90 nm thick)/YSZ(5 nm thick) thin film was reduced to 0.4 V. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:268 / 273
页数:6
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