Nonlinear Analysis and Structure Optimization of a DAR IMPATT diode

被引：0
|
作者：
Zemliak, A. [1 ,2 ]
Cabrera, S. [1 ]
Machusskiy, E. [2 ]
机构：
[1] Puebla Autonomous Univ, Puebla, Mexico
[2] Natl Tech Univ Ukraine, Kiev, Ukraine
来源：
18TH INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND COMPUTERS (CONIELECOMP 2008), PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/CONIELECOMP.2008.17
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis and optimization of the n(+)Pvnp(+) avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as Double Avalanche Region (DAR) IMPATT diode includes two avalanche regions inside the diode. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and were optimized for the second frequency band near the 220 GHz.
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页码：139 / +
页数：2
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