Spin Relaxation in InAs Columnar Quantum Dots

被引：0
|
作者：
Umi, Takehiko [1 ]
Nosho, Hidetaka [1 ]
Lu, Shulong [2 ]
Li, Lianhe [3 ]
Fiore, Andrea [4 ]
Tackeuchi, Atsushi [1 ]
机构：
[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 215125, Peoples R China
[3] Ecole Polytech Fed Lausanne, Inst Photon & Quantum Elect, CH-1015 Lausanne, Switzerland
[4] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
POLARIZATION; WELLS; DYNAMICS; LASERS; LIGHT;
D O I：
10.1143/JJAP.48.04C199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism. (C) 2009 The Japan Society of Applied Physics
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页数：3
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