Growth of Ni Thin Films on Al2O3 Single-Crystal Substrates

被引：6

作者：

Nishiyama, Tsutomu ^{[1
]}

Tanaka, Takahiro ^{[1
]}

Shikada, Kouhei ^{[1
]}

Ohtake, Mitsuru ^{[1
]}

Kirino, Fumiyoshi ^{[2
]}

Futamoto, Masaaki ^{[1
]}

机构：

[1] Chuo Univ, Fac Sci & Engn, Bunkyo Ku, Tokyo 1128551, Japan

[2] Tokyo Natl Univ Fine Arts & Mus, Grad Sch Fine Arts, Tokyo 1108714, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 01期

关键词：

ELECTRONIC-STRUCTURE; METAL ALUMINA; INTERFACES; ADHESION;

D O I：

10.1143/JJAP.48.013003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni thin films were prepared on Al2O3(11 (2) over bar0) and Al2O3(0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy (UHV-MBE). The film growth structure and the magnetic properties were investigated. Ni epitaxial thin films with Ni(111) and Ni(100) planes parallel to the substrate surface are obtained on Al2O3(11 (2) over bar0) substrates, whereas Ni polycrystalline films grow on Al2O3(0001) substrates. The Ni(111) film formed on Al2O3(11 (2) over bar0) substrate consists of two types of domains whose orientations are rotated around the film normal by 30 degrees each other. The magnetic properties of Ni films grown on Al2O3 substrates are influenced by the magnatocrystalline anisotropy and the shape anisotropy caused by the roughness of Ni islands which form the Ni thin films. The relationships between the film structure and the magnetic properties are discussed. (c) 2009 The Japan Society of Applied Physics

引用

页数：4

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