Temperature behaviour of resonant cavity light-emitting diodes at 650 nm

Performance characteristics of resonant cavity light-emitting diodes operating at the wavelength of 650 nm have been studied. It has been shown that a variation ih device temperature significantly modifies the far-field pattern and thus the fibre coupling efficiency, due to a cavity detuning effect. Temperature dependences of output power and emission wavelength are also studied. Modulation bandwidth of > 120 MHz and light power of 2 mW (cw) have been achieved far empty set 84 mu m devices driven at a 40 mA current, Accelerated ageing tests for 36 000 device hours indicate no degradation in output power.