Lateral Tip Control Effects in CD-AFM Metrology: The Large Tip Limit

被引:1
|
作者
Dixson, Ronald [1 ]
Goldband, Ryan S. [1 ,2 ]
Orji, Ndubuisi G. [1 ]
机构
[1] NIST, Engn Phys Div, Gaithersburg, MD 20899 USA
[2] SUNY Binghamton, Binghamton, NY 13902 USA
来源
SCANNING MICROSCOPIES 2015 | 2015年 / 9636卷
关键词
CD-AFM; dither; metrology; CD; linewidth; tip width; calibration;
D O I
10.1117/12.2199169
中图分类号
TH742 [显微镜];
学科分类号
摘要
Critical dimension atomic force microscopes (CD-AFMs) use flared tips and two-dimensional sensing and control of the tip-sample interaction to enable scanning of features with near-vertical or even reentrant sidewalls. Sidewall sensing in CD-AFM usually involves lateral dither of the tip, which was the case in the first two generations of instruments. Current, third generation instruments also utilize a control algorithm and fast response piezo actuator to position the tip in a manner that resembles touch-triggering of coordinate measuring machine (CMM) probes. All methods of tip position control, however, induce an effective tip width that may deviate from the actual geometrical tip width. The National Institute of Standards and Technology (NIST) has been investigating the dependence of effective tip width on the dither settings and lateral stiffness of the tip, as well as the possibility of material effects due to sample composition. We have concluded that these effects will not generally result in a residual bias, provided that the tip calibration and sample measurement are performed under the same conditions. To further validate our prior conclusions about the dependence of effective tip width on lateral stiffness, we recently performed experiments using a very large non-CD tip with an etched plateau of approximately 2 mu m width. The effective lateral stiffness of these tips is at least 20 times greater than typical CD-AFM tips, and these results supported our prior conclusions about the expected behavior for larger tips. The bottom-line importance of these latest observations is that we can now reasonably conclude that a dither slope of 3 nm/V is the baseline response due to the induced motion of the cantilever base.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Effects of lateral tip control in CD-AFM width metrology
    Dixson, Ronald
    Ng, Boon Ping
    Orji, Ndubuisi
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2014, 25 (09)
  • [2] Lateral tip control effects in critical dimension atomic force microscope metrology: the large tip limit
    Dixson, Ronald G.
    Orji, Ndubuisi G.
    Goldband, Ryan S.
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (01):
  • [3] Advanced CD-AFM probe tip shape characterization for metrology accuracy and throughput
    Liu, Hao-Chih
    Osborne, Jason R.
    Osborn, Marc
    Dahlen, Gregory A.
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXI, PTS 1-3, 2007, 6518
  • [4] Progress on CD-AFM tip width calibration standards
    Dixson, Ronald
    Ng, Boon Ping
    McGray, Craig D.
    Orji, Ndubuisi G.
    Geist, Jon
    SCANNING MICROSCOPIES 2012: ADVANCED MICROSCOPY TECHNOLOGIES FOR DEFENSE, HOMELAND SECURITY, FORENSIC, LIFE, ENVIRONMENTAL, AND INDUSTRIAL SCIENCES, 2012, 8378
  • [5] Tip characterization for CD-AFM: Getting to 2 nm, 3 sigma
    Miller, K
    Chand, A
    Dahlen, G
    Todd, B
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 : 863 - 868
  • [6] CD-AFM reference metrology at NIST and SEMATECH
    Dixson, R
    Fu, J
    Orji, N
    Guthrie, W
    Allen, R
    Cresswell, M
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIX, PTS 1-3, 2005, 5752 : 324 - 336
  • [7] Tip characterization method using multi-feature characterizer for CD-AFM
    Orji, Ndubuisi G.
    Itoh, Hiroshi
    Wang, Chumei
    Dixson, Ronald G.
    Walecki, Peter S.
    Schmid, Sebastian W.
    Irmer, Bernd
    ULTRAMICROSCOPY, 2016, 162 : 25 - 34
  • [8] Reference metrology using a next generation CD-AFM
    Dixson, R
    Guerry, A
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 633 - 646
  • [9] Comparison of EUV Photomask Metrology Between CD-AFM and TEM
    Dai, Gaoliang
    Hahm, Kai
    Sebastian, Lipfert
    Heidelmann, Markus
    NANOMANUFACTURING AND METROLOGY, 2022, 5 (02) : 91 - 100
  • [10] A Holistic Metrology Approach: Hybrid Metrology Utilizing Scatterometry, CD-AFM and CD-SEM
    Vaid, Alok
    Bin Yan, Bin
    Jiang, Yun Tao
    Kelling, Mark
    Hartig, Carsten
    Allgair, John
    Ebersbach, Peter
    Sendelbach, Matthew
    Rana, Narender
    Katnani, Ahmad
    Mclellan, Erin
    Archie, Charles
    Bozdog, Cornel
    Kim, Helen
    Sendler, Michael
    Susan Ng
    Sherman, Boris
    Brill, Boaz
    Turovets, Igor
    Urensky, Ronen
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXV, PT 1 AND PT 2, 2011, 7971