Anion Doping Delays Nonradiative Electron-Hole Recombination in Cs-Based All-Inorganic Perovskites: Time Domain ab Initio Analysis

被引:21
|
作者
Zhao, Xi [1 ]
Vasenko, Andrey S. [2 ,3 ]
Prezhdo, Oleg, V [4 ,5 ,6 ]
Long, Run [1 ]
机构
[1] Beijing Normal Univ, Coll Chem, Key Lab Theoret & Computat Photochem, Minist Educ, Beijing 100875, Peoples R China
[2] HSE Univ, P N Lebedev Phys Inst, Russian Acad Sci, I E Tamm Dept Theoret Phys, Moscow 101000, Russia
[3] Russian Acad Sci, P N Lebedev Phys Inst, IE Tamm Dept Theoret Phys, Moscow 119991, Russia
[4] Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
[5] Univ Southern Calif, Dept Phys, Los Angeles, CA 90089 USA
[6] Univ Southern Calif, Dept Astron, Los Angeles, CA 90089 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 49期
基金
北京市自然科学基金; 美国国家科学基金会;
关键词
LEAD HALIDE PEROVSKITES; CHARGE SEPARATION; SOLAR-CELLS; ROOM-TEMPERATURE; PYXAID PROGRAM; CRYSTAL-GROWTH; CESIUM; PHASE; STABILITY; DYNAMICS;
D O I
10.1021/acs.jpclett.2c03072
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using time-domain density functional theory combined with nonadiabatic (NA) molecular dynamics, we demonstrate that composition engineering of the X-site anions has a strong influence on the nonradiative electron-hole recombination and thermodynamic stability of cesium-based all-inorganic perovskites. Partial substitution of iodine(I) with bromine (Br) and acetate (Ac) anions reduces the NA electron-vibrational coupling by minimizing the overlap between the electron and hole wave functions and suppressing atomic fluctuations. The doping also widens the energy gap to further reduce the NA coupling and to enhance the open-circuit voltage of perovskite solar cells. These factors increase the charge carrier lifetime by an order of magnitude and improve structural stability in the series CsPbI1.88BrAc0.12 > CsPbI2Br > CsPbI3. The fundamental atomistic insights into the influence of anion doping on the photophysical properties of the all-inorganic lead halide perovskites guide the design of efficient optoelectronic materials.
引用
收藏
页码:11375 / 11382
页数:8
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