Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films

被引：12
|
作者：
Zhang, GJ [1 ]
Gu, DH [1 ]
Gan, FX [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Dens Opt Storage, Shanghai 201800, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 131卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
thin films; crystallization; X-ray;
D O I：
10.1016/j.ssc.2004.05.009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Crystallization in amorphous Sb-rich AgInSbTe films was induced by femtosecond laser with an average power 65 mW at a frequency of 1 kHz and a pulsed duration of 120 fs. The reflectivity and X-ray diffraction measurements confirmed the formation of the crystalline state in amorphous Sb-rich AgInSbTe films. Atom force microscopy (AFM) observed the characteristics of the surface morphology of amorphous, annealed and femtosecond laser-induced films. Results indicated the surface of Sb-rich AgInSbTe films induced by femtosecond laser is not smooth and contains many crystalline granules. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：211 / 215
页数：5
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