Role of substrate in electrodeposited copper telluride thin films

被引：19
|
作者：
Jeyakumar, P. [1 ]
Thanikaikarasan, S. [2 ]
Natarajan, B. [1 ]
机构：
[1] Raja Doraisingam Govt Arts Coll, Dept Phys, Sivagangai 630561, Tamil Nadu, India
[2] PSN Coll Engn & Technol, Sch Basic Engn & Sci, Ctr Sci & Appl Res, Tirunelveli 627152, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 03期
关键词：
LOW-TEMPERATURE; SOLAR-CELLS; SELENIDE; DEPOSITION; CU2TE;
D O I：
10.1007/s10854-016-5828-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper telluride thin films have been prepared on different substrates using an electrodeposition technique. Stylus profilometry has been carried out to find out thickness value of the deposited films. X-ray diffraction analysis revealed that the prepared films possess polycrystalline in nature. Film composition with surface morphology has been analyzed using an energy dispersive analysis by X-rays and scanning electron microscopy. Optical absorption analysis showed that the prepared films possess band gap value in the range between 2.02 and 2.26 eV. Value of refractive index, extinction coefficient, real and imaginary dielectric constants are estimated for films obtained on transparent substrates.
引用
收藏
页码：2538 / 2544
页数：7
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