MODELING THE RESPONSE OF A PLANAR SILICON DETECTOR WHEN MEASURING THE EXPOSURE DOSE RATE IN THE ENERGY RANGE FROM 5 keV TO 10 MeV

The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detecting gamma quantum in the energy range 0.1...10 MeV. The requirements are formulated to optimize the design of detectors operating in a wide range of dose rates and gamma radiation energies by computer simulation. Mathematical calculations and computer simulations determine the dosimeter design, materials and thicknesses gamma-converter. The mechanisms of modeling the absorbed dose in air and ambient dose in silicon detectors with a thickness of 300 mu m, sizes (5 x 5)mm(2) and (1.8 x 1.8)mm(2), in the range of incident gamma-ray energies from 5 keV to 10MeV are presented.