The low-energy physics of rhombohedral N-layer graphene mainly arises on the external layers, where most of the pi electrons are located. Their Bloch band structure defines a two-band semimetal; the dispersion relation scales as +/- q(N) with the momentum norm q in the vicinity of two nonequivalent valleys. In this paper, we address the problem of elastic scattering through a localized impurity located either on the surface of the material or within the bulk, and focus on the quantum interferences it induces on the two external layers. It is apprehended in the framework of a T-matrix approach, both numerically and analytically, regardless of the impurity magnitude, which enables the description of realistic scatters. In rhombohedral multilayer graphene, the impurity induces Friedel oscillations that always decay as 1/r. As a result, monolayer graphene is the only material of the rhombohedral class that exhibits 1/r(2)-decaying Friedel oscillations. The interference patterns are subsequently analyzed in momentum space. This analysis enables a clear distinction between monolayer graphene and multilayer graphene. It also shows that the interference pattern reveals the whole Bloch band structure, and highlights the number of layers stacked in the material, as well as the pi-quantized Berry phases that characterize the existence of nodal points in the semimetallic spectrum. Experimentally, these features may be probed from scanning tunneling microscopy, when imaging the local density of states at the surfaces of suspended rhombohedral N-layer graphene.
机构:
An Giang Univ, VNU HCM, 18 Ung Van Khiem St, Long Xuyen, An Giang, VietnamAn Giang Univ, VNU HCM, 18 Ung Van Khiem St, Long Xuyen, An Giang, Vietnam
机构:
Univ Sci VNUHCM, 227 Nguyen Van Cu St,5th Dist, Ho Chi Minh City, VietnamTon Duc Thang Univ, Adv Inst Mat Sci, Atom Mol & Opt Phys Res Grp, Ho Chi Minh City, Vietnam
Nguyen Quoc Khanh
Dong Thi Kim Phuong
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Univ An Giang, 18 Ung Van Khiem St, Long Xuyen, An Giang, VietnamTon Duc Thang Univ, Adv Inst Mat Sci, Atom Mol & Opt Phys Res Grp, Ho Chi Minh City, Vietnam
机构:
Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Jorio, Ado
Lucchese, Marcia M.
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Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Lucchese, Marcia M.
Stavale, Fernando
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Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Stavale, Fernando
Martins Ferreira, Erlon H.
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Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Martins Ferreira, Erlon H.
Moutinho, Marcus V. O.
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Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Moutinho, Marcus V. O.
Capaz, Rodrigo B.
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Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil
Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
Capaz, Rodrigo B.
Achete, Carlos A.
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Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil
Univ Fed Rio de Janeiro, PEMM, BR-21945970 Rio De Janeiro, BrazilUniv Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil