Fabrication and electrical properties of polycrystalline Si films on glass substrates

被引：5
|
作者：
Huang, Shi-hua [1 ]
Liu, Jian [1 ]
Jing, Wei-ke [1 ]
Lu, Fang [2 ]
Hu, Gu-jin [3 ]
机构：
[1] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China
[2] Fudan Univ, Surface Phys Natl Key Lab, Shanghai 200433, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2014年 / 49卷
基金：
中国国家自然科学基金;
关键词：
Semiconductors; Microstructure; Electrical properties; ALUMINUM-INDUCED CRYSTALLIZATION; THIN-FILMS; SILICON;
D O I：
10.1016/j.materresbull.2013.08.049
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-induced a-Si crystallization process has been used to prepare polycrystalline Si (pc-Si) thin films on glass substrates. It has been found that the glass/Al/Al2O3/a-Si multilayer could be transformed into the structure of glass/Si/Al2O3/Al via a thermal treatment at 500 degrees C for 5 h. The Si layer in the glass/Si/Al2O3/Al system is in the polycrystalline state and exhibits a high crystallographic quality, a dense and continuous surface morphology, an average grain size of similar to 18 mu m, a similar to 2.6 x 10(19) cm(-3) hole concentration and a similar to 24.2 cm(2)/V s hole mobility. The crystallographic quality and electrical performance of the pc-Si film can be further improved by increasing crystallization time and temperature. The obtained pc-Si material may be a suitable candidate for the solar cells. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：71 / 75
页数：5
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