Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency

被引：55
|
作者：
Shinohara, K
Yamashita, Y
Endoh, A
Hikosaka, K
Matsui, T
Mimura, T
Hiyamizu, S
机构：
[1] Commun Res Labs, Tokyo 1848795, Japan
[2] Fujitsu Labs Ltd, Kanagawa 2430197, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 4B期
关键词：
InP; InGaAs/InAlAs; lattice-matched; HEMT; cutoff frequency; gate length; gate-recess;
D O I：
10.1143/JJAP.41.L437
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record cutoff frequency f(t) of 472 GHz. the highest value yet reported for any transistor. The f(t) value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased g(m) achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
引用
收藏
页码：L437 / L439
页数：3
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