A brief review on plasma for synthesis and processing of electrode materials

被引:77
|
作者
Ouyang, B. [1 ]
Zhang, Y. [2 ]
Xia, X. [3 ]
Rawat, R. S. [1 ]
Fan, H. J. [2 ]
机构
[1] Nanyang Technol Univ, Natl Inst Educ, Nat Sci & Sci Educ, Singapore 637616, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
[3] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China
来源
MATERIALS TODAY NANO | 2018年 / 3卷
基金
中国国家自然科学基金;
关键词
Surface modification; Conversion reaction; Renewable energy; Plasma technique; Nano-materials; CHEMICAL-VAPOR-DEPOSITION; NITROGEN-DOPED GRAPHENE; DIELECTRIC BARRIER DISCHARGE; LOW-TEMPERATURE SYNTHESIS; IMMERSION ION-IMPLANTATION; TRANSITION-METAL CARBIDES; FIELD-EMISSION PROPERTIES; WALLED CARBON NANOTUBES; BINDER-FREE ELECTRODES; THIN-FILMS;
D O I
10.1016/j.mtnano.2018.11.002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasma, as an active, ionized, and electrically neutral gas, consists of electrons, ions, molecules, radicals, photons, and other excited species. Owing to its high activity, plasma can induce rapid and efficient reactions under relatively mild conditions. Hence, plasma has emerged as a powerful tool for material processing in both industrial and laboratory scale. This review provides a timely summary of different plasma techniques and their application in electrode materials. We first provide a brief introduction to the nature of plasma and types of plasma technologies. Then we summarize the recent advance in material synthesis and processing (deposition, conversion reaction, and surface modification) via plasma-assisted techniques with different feedstocks (C, H, N, O, Ar, S, P, etc.). Our focus is to put on electrode materials for energy conversion and storage devices, including batteries, supercapacitors, photocatalyst, and electrocatalysts. The advantages of plasma approaches over conventional technologies are discussed with examples. (c) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:28 / 47
页数:20
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