Infrared magneto-photoluminescence spectra and electron-hole g-factor of an InAs-inserted channel InGaAs/InAlAs heterostructure

被引：2
|
作者：
Tsumura, K.
Nomura, S.
Akazaki, T.
Nitta, J.
机构：
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
[2] NTT, Basic Res Labs, Kanagawa 2430198, Japan
[3] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
[4] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期
关键词：
magneto-photoluminescence; InAs; infrared spectroscopy; g-factor;
D O I：
10.1016/j.physe.2006.03.082
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We performed infrared magneto-photoluminescence (PL) spectroscopy on an InAs-inserted-channel InGaAs/InAlAs heterostructure. Series of Landau levels were clearly observed in the infrared PL spectra. From the energy separation between sigma+ and sigma- components of PL, the electron-hole g-factor in each Landau level were determined. We discuss the obtained Landau fan-diagram from the points that nonparabolicity of conduction band structure and penetration of electron wavefunction into InGaAs layer. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：315 / 317
页数：3
相关论文
共 8 条
  • [1] Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
    1600, American Institute of Physics Inc. (121):
  • [2] G-factor control in an InAs-inserted InGnAs/InAlAs heterostructure
    Nitta, J
    Lin, YP
    Akazaki, T
    Koga, T
    REALIZING CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2005, : 371 - 376
  • [3] Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
    Terent'ev, Ya. V.
    Danilov, S. N.
    Durnev, M. V.
    Loher, J.
    Schuh, D.
    Bougeard, D.
    Ivanov, S. V.
    Ganichev, S. D.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (05)
  • [4] Electron g factor in a gated InGaAs channel with double InAs-inserted wells
    Lin, Y
    Nitta, J
    Koga, T
    Akazaki, T
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 656 - 660
  • [5] The g-factor of quasi-two-dimensional electrons in InAs/InGaAs/InAlAs inserted-channels
    Pakmehr, Mehdi
    Khaetskii, A.
    McCombe, B. D.
    Bhandari, N.
    Cahay, M.
    Chiatti, Olivio
    Fischer, S. F.
    Heyn, C.
    Hansen, W.
    APPLIED PHYSICS LETTERS, 2015, 107 (08)
  • [6] MAGNETO-PHOTOLUMINESCENCE OF A QUASI 2-D ELECTRON-HOLE GAS IN INGAAS/GAAS STRAINED QUANTUM-WELLS
    ROTH, AP
    LACELLE, C
    MORRIS, D
    LONGEART, M
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (02) : 239 - 244
  • [7] Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure
    Nitta, J
    Lin, YP
    Koga, T
    Akazaki, T
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 429 - 432
  • [8] Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure
    Nitta, J
    Lin, YP
    Akazaki, T
    Koga, T
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4565 - 4567
1