Reliability of smart power devices

被引:9
|
作者
Murari, B
机构
[1] SGS-THOMSON Microelectronics, 20010 Cornaredo, Milano
来源
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期
关键词
D O I
10.1016/S0026-2714(97)00151-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Smart power devices of the last generation are able to integrate a full electronic system, including logic and analog functions and power drivers, in a true single chip solution exploiting the advanced features made available by mixed BCD processes developed for this purpose. The complexity of the ICs and their applications together with the severe stress conditions which these devices can experience in the field makes the reliability assurance of the Smart Power ICs a very challenging task and for this purpose a complete approach is necessary combining an application oriented IC qualification methodology with structural evaluations to test the intrinsic reliability of the basic process elements. In this context the knowledge of the main failure mechanisms is fundamental both for an effective detection in qualification and for an early prevention during IC design. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:1735 / 1742
页数:8
相关论文
共 50 条
  • [1] Reliability study of thermal cycling stress on smart power devices
    Zhang, Ming
    Yoshihisa, Yasuki
    Furuya, Keiichi
    Imai, Yukari
    Hatasako, Kenichi
    Ipposhi, Takashi
    Maegawa, Shigeto
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [2] SMART POWER DEVICES
    TIHANYI, J
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 141 - 144
  • [3] Reliability of Power Devices
    Meneghesso, Gaudenzio
    [J]. 2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : xii - xii
  • [4] Impact of thermal overload operation on wirebond and metallization reliability in smart power devices
    Glavanovics, M
    Detzel, T
    Weber, K
    [J]. ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 273 - 276
  • [5] Reliability tests on power devices
    Marcos, J
    Pallás, JMP
    Fernández-Gómez, S
    [J]. ANNUAL RELIABILITY AND MAINTAINABILITY SYMPOSIUM, 2002 PROCEEDINGS, 2002, : 618 - 621
  • [6] Technology CAD for smart power devices
    Plasun, R
    Pichler, C
    Simlinger, T
    Selberherr, S
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 481 - 488
  • [7] SMART POWER DEVICES - EDITORS LETTER
    不详
    [J]. ELECTRONICS, 1984, 57 (11): : 6 - 6
  • [8] Modelling and Characterisation of Smart Power Devices
    Wunderle, B.
    Ras, M. Abo
    Springborn, M.
    May, D.
    Kleff, J.
    Oppermann, H.
    Toepper, M.
    Caroff, T.
    Schacht, R.
    Mitova, R.
    [J]. 2012 18TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), 2012, : 229 - 237
  • [9] Technology CAD for smart power devices
    Simlinger, T
    Pichler, C
    Plasun, R
    Selberherr, S
    [J]. CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 383 - 393
  • [10] The Practice of Reliability Evaluation for Power Devices
    Yasaka, Shinichi
    Takahashi, Kuniaki
    [J]. Journal of Japan Institute of Electronics Packaging, 2022, 25 (05) : 499 - 505