Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering

被引：3
|
作者：
Ivanov, PA [1 ]
Kon'kov, OI [1 ]
Terukov, EI [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 05期
关键词：
D O I：
10.1134/1.1188035
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Current-voltage characteristics of electroluminescent structures composed of metal, erbium-doped amorphous silicon, and crystalline silicon and prepared by magnetron sputtering were measured and analyzed. It is shown that the carrier transport in a high-resistivity (a-Si:H):Er film (resistivity similar to 10(9) Ohm cm) proceeds by the mechanism of unipolar-injection space-charge-limited currents controlled by two types of traps. Trap parameters, namely, the densities and ionization energies of acceptor and donor centers (similar to 10(19) cm(-3) for both types of traps; 0.85-0.95 eV and 0.4 eV, respectively) are estimated by analyzing the current-voltage characteristics. In the light of the results obtained, the published excitation mechanism of erbium-related electroluminescence in such a material is discussed. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：598 / 602
页数：5
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