Material Solutions for High-reliability and High-temperature Power Electronics

The advances in semiconductor technology - in particular silicon carbide result in devices with high power densities and allow operation of assemblies at significantly higher junction temperatures compared to silicon. The interconnection technologies play a major role in uninterrupted operation of the devices and assemblies. Power modules built with silver sintering as die-attach and top-side copper wire bonding show increased lifetime of atleast ten times than identical modules that are soldered and aluminum wire bonded. This contribution gives insights in the integration of Heraeus Die Top System (DTS (R)) technology for top-side die-attach and silver sintering as backside die-attach for new generation SiC based power modules. This article also summarizes the influences of the above technologies for high temperature and high reliable power modules production.