InGaN/GaN MQW Photoluminescence Enhancement by Localized Surface Plasmon Resonance on Isolated Ag Nanoparticles

被引：6
|
作者：
Dobrovolskas, D. [1 ,2 ]
Mickevicius, J. [1 ,2 ]
Nargelas, S. [1 ,2 ]
Chen, H. S. [3 ]
Tu, C. G. [3 ]
Liao, C. -H. [3 ]
Hsieh, C. [3 ]
Su, C. Y. [3 ]
Tamulaitis, G. [1 ,2 ]
Yang, C. C. [3 ]
机构：
[1] Vilnius State Univ, Semicond Phys Dept, LT-10222 Vilnius, Lithuania
[2] Vilnius State Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania
[3] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
PLASMONICS | 2014年 / 9卷 / 05期
关键词：
InGaN; MQW; Localized surface plasmon; Photoluminescence; Confocal microscope; Scanning near-field opticalmicroscope; Time-resolved differential transmission; QUANTUM-WELLS; EMISSION;
D O I：
10.1007/s11468-014-9729-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Spectroscopic study of photoluminescence (PL) enhancement due to the coupling of the light emitters in InGaN/GaN multiple quantum wells (MQWs) with the localized surface plasmon (LSP) resonance on silver (Ag) nanoparticles (NPs) is performed using the confocal microscopy and scanning near-field optical microscopy (SNOM) techniques. The paper is focused on revealing the emission enhancement due to coupling with a single metal nanoparticle. The enhancement is confirmed by time-resolved study of differential transmission (DT). The enhancement suppression caused by potential fluctuations due to the variations of indium content and quantum well (QW) width is also studied. A strong photoexcitation intensity dependence of the emission enhancement due to spectral runaway of the MQW emission from the resonance as carrier density increases is observed both in spatially integrated spectra and in the vicinity of a single nanoparticle.
引用
收藏
页码：1183 / 1187
页数：5
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