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- [1] A 60GHz Highly Reliable Power Amplifier with 13dBm Psat 15% Peak PAE in 65nm CMOS Technology 2015 IEEE 15TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2015, : 58 - 60
- [2] A two-way power-combining 60GHz CMOS Power Amplifier with 22.0% PAE and 19.4dBm Psat in 65nm Bulk CMOS 2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2021,
- [3] A 60GHz Power Amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI 2009 PROCEEDINGS OF ESSCIRC, 2009, : 169 - +
- [5] A 28GHz Power Amplifier with 23.5 dBm Psat in 65nm SOI CMOS 2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 236 - 239
- [6] Optimization of 65nm CMOS Passive Devices to Design a 16 dBm-Psat 60 GHz Power Amplifier 2013 IEEE 4TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS), 2013,
- [7] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS 2015 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2015,
- [8] A 44.9% PAE Digitally-Assisted Linear Power Amplifier in 40 nm CMOS 2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2014, : 349 - 352
- [9] A 60GHz Transformer Coupled Amplifier in 65nm Digital CMOS 2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 343 - 346