Low temperature synthesis of ferroelectric Sr2Nb2O7 thin films by rapid thermal annealing

被引：0
|
作者：
Shoyama, M
Tsuzuki, A
Kato, K
Murayama, N
机构：
[1] Mie Prefectural Ind Res Inst, Ceram Lab, Yokkaichi, Mie 5100805, Japan
[2] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan
来源：
INTEGRATED FERROELECTRICS | 1999年 / 25卷 / 1-4期
关键词：
Sr2Nb2O7 thin film; sol-gel method; RTA process; low temperature process; MFMIS structure; non-volatile memory;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric Sr2Nb2O7 thin films were successfully prepared on Pt/TiO2/SiO2/Si(100) substrates at temperatures as low as 650 degrees C using a sol-gel method with rapid thermal annealing (RTA). It was found that improvements in film crystallinity and microstructural evolution could be realized by using a RTA process after each coating step. The Sr2Nb2O7 films annealed above 650 degrees C exhibited an 0k0 preferred orientation. The dielectric constant, loss value and remanent polarization of thin films annealed at 700 degrees C were 48, 0.01 and 0.5 mu C/cm(2), respectively.
引用
收藏
页码：535 / 543
页数：9
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