Device technologies for future mobile wireless applications

被引：0
|
作者：
Tsai, HS [1 ]
Wang, YC [1 ]
Kuo, JM [1 ]
Chen, YK [1 ]
Ren, F [1 ]
Lothian, JR [1 ]
机构：
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The trends for future mobile handsets or any equivalent devices are small in size, light in weight, and longer talk and standby time. Because a battery is the largest component in a handset, it is obvious that reducing battery size is the key; that means the current 3V operation need to be reduced to 2V or even 1V. This low voltage operation presents a great challenge for electronic components, especially the power amplifier. In this paper, we will present double-heterojunction pseudomorphic high electron mobility transistor (DH-PHEMT) devices with InGaP/InGaAs and InAlGaP/InGaAs, which show promising results for low voltage operation. Under 1.2V bias, output power of 21.5dBm and PAE of 57.4% has been obtained at 850MHz with 1cm gate width.
引用
收藏
页码：58 / 65
页数：8
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