Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer

被引：7

作者：

Guo, Qixin ^{[1
]}

Sueyasu, Yusuke ^{[2
]}

Tanaka, Tooru ^{[2
]}

Nishio, Mitsuhiro ^{[2
]}

Cao, Juncheng ^{[3
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期

关键词：

VAPOR-PHASE EPITAXY; DRY-ETCHING PROCESSES; P-TYPE ZNTE; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; ZINC TELLURIDE; FABRICATION; STRAIN;

D O I：

10.1143/JJAP.48.080208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of a low-temperature ZnTe buffer layer on the crystallinity and surface roughness of ZnTe epilayers grown on (100) GaAs substrates by metalorganic vapor phase epitaxy are investigated. X-ray rocking curves, Raman spectra, and atomic force microscopy analysis results prove that both the crystallinity and surface roughness of ZnTe epilayers can be markedly improved by introducing a low-temperature ZnTe buffer layer, and that the thickness of the low-temperature ZnTe buffer layer is critical for obtaining a high-crystallinity ZnTe epilayer with a smooth surface. (C) 2009 The Japan Society of Applied Physics

引用

页码：0802081 / 0802083

页数：3

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