Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

被引：0
|
作者：
Shi Tao [1 ,2 ]
Zhou Jian [1 ]
Shen Qian-Hong [1 ]
Yang Hui [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Forest Univ, Sch Sci, Linan 311300, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2009年 / 24卷 / 06期
关键词：
sol-gel; Al2O3:Tb3+; film; photoluminescence; SOL-GEL METHOD; ALUMINA FILMS; OPTICAL-PROPERTIES; ANODIC ALUMINA; XEROGELS;
D O I：
10.3724/SP.J.1077.2009.01105
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Tb3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel. The Tb3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb3+-doped Al2O3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb3+:Al2O3 films were discussed. The results show that the prepared Al2O3:Tb3+ films has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb3+ dopant is 5 mol%, and the main emission is at surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.
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收藏
页码：1105 / 1109
页数：5
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