2.4/5.5GHz LNA Switch Designs Based on High Resistive Substrate 0.35um SiGe BiCMOS

被引：0

作者：

Li, Chaojiang ^{[1
]}

Wang, Xiaoxia ^{[2
]}

Jain, Vibhor ^{[1
]}

Ding, Hanyi ^{[1
]}

Boenke, Myra ^{[1
]}

Wang, Dawn ^{[1
]}

Wolf, Randy ^{[1
]}

Joseph, Alvin ^{[1
]}

机构：

[1] GlobalFoundries, 1000 River Rd, Essex Jct, VT 05452 USA

[2] GlobalFoundries, Shanghai, Peoples R China

来源：

PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2015年

关键词：

WiFi; LNA designs; Switch; SiGe BiCMOS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we present 2.4/5.5 GHz LNAs with SPDT Switch for WiFi Front-End Modulate Integrated Circuit (FEM IC) based on high resistivity substrate 0.35um SiGe BiCMOS process. For the 2.4GHz LNA, the bias circuit's effect on the nonlinearity is analyzed and measured, and then a new bias circuit is proposed. With 2.7V supply, it consumes 4.2mA current. The measured Gain is about 14.6dB with input and output return loss better than -10dB. The Noise Figure (NF) is 1.16dB, output 1dB compression point is similar to 8dBm, and OIP3 is about 20dBm. For the 5.5GHz LNA with proposed new bias circuit and SPDT switch operating at 7.3mA current with 2.7V power supply, 2.1dB NF and 19dBm OIP3 are achieved in the post layout simulation.

引用

页数：4