Influence of SERS Activity of SnSe2 Nanosheets Doped with Sulfur

被引:15
|
作者
Tian, Yuan [1 ]
Wei, Haonan [1 ]
Xu, Yujie [1 ]
Sun, Qianqian [1 ]
Man, Baoyuan [1 ,2 ]
Liu, Mei [1 ,2 ]
机构
[1] Shandong Normal Univ, Sch Phys & Elect, Jinan 250038, Peoples R China
[2] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
基金
中国国家自然科学基金;
关键词
SnSeS; CVD; doped; SERS; OPTICAL-PROPERTIES; SCATTERING; PHOTOTRANSISTORS; DETECTIVITY; MOSE2; GAS;
D O I
10.3390/nano10101910
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The application of 2D semiconductor nanomaterials in the field of SERS is limited due to its weak enhancement effect and the unclear enhancement mechanism. In this study, we changed the surface morphology and energy level structure of 2D SnSe2 nanosheets using different amounts of S dopant. This caused the vibration coupling of the substrate and the adsorbed molecules and affects the SERS activities of the SnSe2 nanosheets. SERS performance of the 2D semiconductor substrate can effectively be improved by suitable doping, which can effectively break the limitation of 2D semiconductor compounds in SERS detection and will have very important significance in the fields of chemical, biological, and materials sciences. In this work, the intensities of SERS signals for R6G molecules on SnSe0.93S0.94 are 1.3 to 1.7 times stronger than those on pure SnSe2 substrate. It not only provides a new way to effectively improve the SERS activity of a semiconductor SERS substrates but also helps to design more efficient and stable semiconductor SERS substrates for practical application.
引用
收藏
页码:1 / 9
页数:9
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