Room temperature photoluminescence property boron-doped sol-gel silica

被引：5
|
作者：
He, HP [1 ]
Wang, YX [1 ]
Zou, YM [1 ]
机构：
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2004年 / 39卷 / 06期
基金：
中国国家自然科学基金;
关键词：
amorphous materials; sol-gel chemistry; luminescence; defects;
D O I：
10.1016/j.materresbull.2004.02.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Room temperature photoluminescence (PL) of boron-doped silica synthesized by a combined sol-gel and heating process has been investigated. The broad PL band has been resolved into three components centered at 3.7, 3.35 and 2.7 eV, which are assigned to non-bridging oxygen hole centers (NBOHC), carbon-related impurity, and two-fold coordinated silicon atoms, respectively. The intensities of the 3.35 and 2.7 eV bands decrease with the heating temperature increasing, due to oxidation of the corresponding luminescent centers. The effect of boron doping on the formation of intrinsic defects in silica is discussed. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：747 / 753
页数：7
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