Ion bombardment induced segregation effects in VDx studied by SIMS and SNMS

被引：7
|
作者：
Scholz, J
Zuchner, H
Paulus, H
Muller, KH
机构：
[1] UNIV MUNSTER,INST PHYS CHEM,D-48149 MUNSTER,GERMANY
[2] INST TECHNOL & WISSENSTRANSFER,D-59494 SOEST,GERMANY
[3] UNIV GESAMTHSCH PADERBORN,FACHBEREICH ELEKT ENERGIETECH 16,D-59494 SOEST,GERMANY
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 1997年 / 253卷
关键词：
vanadium-deuterium; SIMS; SNMS; segregation; preferential sputtering;
D O I：
10.1016/S0925-8388(96)03000-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Secondary ion mass spectrometry (SIMS) and complementary secondary neutral (particle) mass spectrometry (SNMS) investigations on VD, samples were carried out to study deuterium segregation effects induced by ion bombardment. It could be shown that the sputter process causes a distortion of the near-surface region, which leads, due to the extremely high mobility of deuterium in vanadium, to a deuterium segregation to the surface, i.e. a deuterium enrichment in the sputtered area, and at the same time to a deuterium impoverishment in the bulk (secondary preferential sputtering effect).
引用
收藏
页码：459 / 462
页数：4
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