Origin of room temperature ferromagnetism in ZnO:Cu films

被引：120
|
作者：
Herng, T. S.
Lau, S. P.
Yu, S. F.
Yang, H. Y.
Ji, X. H.
Chen, J. S.
Yasui, N.
Inaba, H.
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Data Storage Inst, Singapore 117608, Singapore
[3] Hitachi Ltd, Cent Res Lab, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期
关键词：
D O I：
10.1063/1.2190711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 mu(B)/Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu. (C) 2006 American Institute of Physics.
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