Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs

被引：6
|
作者：
Collaert, N
De Meyer, K
机构：
[1] IMEC, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, ESAT, INSYS, B-3001 Heverlee, Belgium
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 12期
关键词：
D O I：
10.1016/S0038-1101(99)00185-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of the Ge-concentration on the subthreshold behaviour of vertical Si/Si1-xGex pMOSFETs and of complementary Si1-xGex/Si nMOSFETs is investigated by using an analytical model, which includes thermioonic emission across the hetero-barrier. It is shown that inclusion of Si1-xGex and strained Si in the source region of the pMOSFET and nMOSFET respectively, suppresses the subthreshold slope roll-up substantially and lowers the leakage current of even the smallest devices with channel lengths down to 50 nm. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2173 / 2180
页数：8
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