Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation

被引：5

作者：

Chao, TS ^{[1
]}

Lee, LY

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

[2] Natl Nano Device Lab, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 4A期

关键词：

nickel; salicide; nitrogen implant;

D O I：

10.1143/JJAP.41.L381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen implantation was used to improve the performance of Ni-salicide process for n-type metal oxide semiconductor field effect transistors (MOSFETs). It is found that the driving current and transconductance of nMOSFETs increase with the nitrogen implantation. The hot carrier degradation of the nMOSFETs is significantly reduced as the nitrogen dosage increases.

引用

页码：L381 / L383

页数：3

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