Structural and electronic properties of graphite layers grown on SiC(0001)

Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0001) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30 degrees. On on-axis 6H-SiC(0001) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0001) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0001) layer system we observe a Schottky barrier height of phi(B,n) = 0.3 +/- 0.1 eV. ARUPS spectra of graphite layers grown on 8 degrees off-axis oriented 4H-SiC(0001) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate. (c) 2006 Elsevier B.V. All rights reserved.