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Magnetic domain wall pinning by focused ion beam milling of permalloy layers
被引:3
|作者:
Olziersky, Antonis
[1
]
Vila, Anna
[1
]
Rubio-Roy, Miguel
[2
]
Bertran, Enric
[2
]
Fontcuberta, Josep
[3
]
机构:
[1] Univ Barcelona, EME, Dept Elect, IN2UB, E-08028 Barcelona, Spain
[2] Univ Barcelona, FEMAN, Dept Appl Phys & Opt, IN2UB, E-08028 Barcelona, Spain
[3] ICMAB CSIC, Bellaterra 08193, Spain
关键词:
Focused ion beam;
Permalloy;
Domain walls;
Pinning;
D O I:
10.1016/j.mee.2008.12.028
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Permalloy thin films were deposited on SrTiO(3) Substrates by magnetron sputtering and patterned using a 30 kV Ga(+) focused ion beam to fabricate narrow bridges with notches pointing perpendicular to the bridge. These notches were used to introduce geometrical nanoconstructions in order to study the formation and pinning of magnetic domain walls. Notches were placed either along one side of the bridge or in opposite positions at both sides. Several milling conditions were tested to evaluate the patterning. Atomic and magnetic force microscopy were performed to study the effect of the introduced notches on the magnetization of the bridge. While a plain bridge shows no magnetic contrast, indicating a uniform magnetization, notched bridges clearly demonstrate that domain walls are pinned around the notches. (C) 2008 Elsevier B.V. All rights reserved.
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页码:878 / 881
页数:4
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