Monolithically integrated Mach-Zehnder interferometer all-optical switches by selective area MOVPE

被引:3
|
作者
Song, Xueliang [1 ]
Futakuchi, Naoki
Miyashita, Daisuke
Yit, Foo Cheong
Nakano, Yoshiaki
机构
[1] Univ Tokyo, JST, SORST, Tokyo 1538904, Japan
[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
关键词
selective area growth; metal-organic vapor phase epitaxy; monolithic integration; photonic integrated circuits; all-optical switch; Mach-Zehnder interferometer; semiconductor optical amplifier; wavelength conversion;
D O I
10.1093/ietele/e89-c.7.1068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 pi phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of pi was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
引用
收藏
页码:1068 / 1079
页数:12
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