Distribution of implanted current on trench-shaped targets in plasma-based ion implantation and deposition

被引：4
|
作者：
Ma, XX [1 ]
Yukimura, K [1 ]
机构：
[1] Doshisha Univ, Fac Engn, Dept Elect Engn, Kyoto 6100321, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2004年 / 186卷 / 1-2期
关键词：
PBII; ion sheath; cathodic arc; Langmuir probe;
D O I：
10.1016/j.surfcoat.2004.04.018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The ion current at each position of a trench-shaped target was observed in plasma-based ion implantation and deposition (PBII&D), where a titanium cathodic are at a nitrogen pressure of 8 Pa was used as a plasma source. The width and height of the trench were varied. The arc current and voltage are 80 A dc and 20 V The ion current distribution inside trench was investigated under a strong flow of the plasma species. It was experimentally found that the ion current decreases at the bottom and at the side wall of a narrow width trench, while the target voltage increases. The distribution of ion current is caused by evolution of the ion sheath and the plasma density inside the trench. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：88 / 92
页数：5
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