Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices

被引：19

作者：

Kuchuk, A. V. ^{[1
,2
]}

Kladko, V. P. ^{[1
]}

Petrenko, T. L. ^{[1
]}

Bryksa, V. P. ^{[1
]}

Belyaev, A. E. ^{[1
]}

Mazur, Yu I. ^{[2
]}

Ware, M. E. ^{[2
]}

DeCuir, E. A., Jr. ^{[2
]}

Salamo, G. J. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 24期

基金：

美国国家科学基金会;

关键词：

gallium nitride; superlattice; quantum well; strain; density functional theory; MOLECULAR-BEAM EPITAXY; INTERSUBBAND ABSORPTION; WIDTH FLUCTUATIONS; RELAXATION; GAN(0001); GROWTH; ALGAN; ALN;

D O I：

10.1088/0957-4484/25/24/245602

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.

引用

页数：8

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