Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells

被引：39

作者：

Nichterwitz, M. ^{[1
]}

Abou-Ras, D. ^{[1
]}

Sakurai, K. ^{[2
]}

Bundesmann, J. ^{[1
]}

Unold, T. ^{[1
]}

Scheer, R. ^{[1
]}

Schock, H. W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin, D-14109 Berlin, Germany

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Cu(In; Ga)Se-2; EBIC; Grain boundaries;

D O I：

10.1016/j.tsf.2008.11.064

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron backscatter diffraction (EBSD) in combination with electron beam-induced current (EBIC) measurements in a scanning electron microscope were used to investigate grain boundaries in Cu(In,Ga) Se-2 thin-film solar cells. The measurements were performed on polished cross sections of working devices. EBIC maps enable the analysis of charge-carrier collection with a high spatial resolution and the extraction of the local minority charge-carrier diffusion length. EBSD images reveal the microstructure of the Cu(In,Ga)Se-2 absorber-layer. A combination of these techniques makes it possible to investigate the influence of the microstructure of the Cu(In,Ga)Se-2 absorber-layer and especially of grain boundaries on charge-carrier collection. It is shown that collection properties are grain specific and that there are positions of grain boundaries exhibiting a reduced EBIC signal. These grain boundaries might be regions of enhanced recombination with a recombination velocity of about 1 X 10(4) cm/s. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2554 / 2557

页数：4

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