A low-power fast-lock DCC with a digital duty-cycle adjuster for LPDDR3 and LPDDR4 DRAMs

被引:2
|
作者
Kim, Jongsun [1 ]
Han, S. W. [1 ]
机构
[1] Hongik Univ, Elect & Elect Engn, 94 Wausan Ro, Seoul 121791, South Korea
来源
IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 07期
关键词
duty-cycle corrector; LPDDR3; LPDDR4; SDRAM; memory; DRAM; CORRECTOR; CIRCUIT;
D O I
10.1587/elex.15.20180156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new low-power, fast-lock duty-cycle corrector (DCC) circuit with a digital duty-cycle adjuster (DCA) for mobile LPDDR3/LPDDR4 DRAMs is presented. The proposed DCC utilizes a digital feedback delay element (DFDE) to achieve wide duty-cycle correction and operating frequency ranges with low power consumption and fast lock capability. To obtain fast locking time and high duty-cycle correction accuracy, a 6-bit successive approximation register (SAR) controller utilizing a hybrid search algorithm is adopted. The measured duty-cycle error is less than +/- 0.85% over a 30-70% input duty-cycle range at 0.2-1.5 GHz. The DCC, which is fabricated in a 0.13-mu m CMOS process, dissipates only 1.9 mW at 1 GHz and occupies an area of 0.036 mm(2).
引用
收藏
页数:9
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