Growth and properties of ZnO thin film on β-Ga2O3(100) substrate by pulsed laser deposition

被引：6

作者：

Zhang, Jungang

Li, Bin

Xia, Changtai ^{[1
]}

Deng, Qun

Xu, Jun

Pei, Guangqing

Wu, Feng

Wu, Yongqing

Shi, Hongsheng

Xu, Wusheng

Yang, Zhaohui

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China

[4] GE China Res & Dev Ctr Co Ltd, Shanghai 201203, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 296卷 / 02期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy; characterization; floating zone technique; laser epitaxy; zinc compounds; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2006.08.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：186 / 190

页数：5

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