Stochastic equation for the morphological evolution of heteroepitaxial thin films

被引：16
|
作者：
Haselwandter, Christoph A. [1 ]
Vvedensky, Dimitri D. [1 ]
机构：
[1] Imperial Coll, Blackett Lab, London SW7 2BW, England
来源：
PHYSICAL REVIEW B | 2006年 / 74卷 / 12期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1103/PhysRevB.74.121408
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A stochastic partial differential equation for the morphological evolution of strained epitaxial films is derived from atomistic aggregation kinetics. The transition rules and rates are based on a model that incorporates the effects of strain through environment-dependent energy barriers to adatom detachment. Comparisons with previous approaches based on continuum elasticity provide an atomistic interpretation of the governing equation for heteroepitaxial thin films.
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页数：4
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