Electronic Structure and the Properties of Phosphorene and Few-Layer Black Phosphorus

被引:66
|
作者
Fukuoka, Shuhei [1 ]
Taen, Toshihiro [1 ]
Osada, Toshihito [1 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
关键词
FIELD-EFFECT TRANSISTORS; TRANSPORT ANISOTROPY; QUANTUM OSCILLATIONS; THERMAL TRANSPORT; INERT ATMOSPHERE; CHARGE-TRANSFER; THIN-FILMS; NANORIBBONS; BAND; SEMICONDUCTOR;
D O I
10.7566/JPSJ.84.121004
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and qualitatively discuss the electronic structure of phosphorene systems under electric and magnetic fields, especially noting their midgap edge states. The next part is devoted to the review of the progress in research on phosphorene over the past one year since its realization in 2014. Phosphorene has been a typical material to study the semiconductor physics in atomic layers.
引用
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页数:12
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