Structure and Conductivity of Cu(In0.7Ga0.3)Se2 Target Processed by Spark Plasma Sintering

The Cu(In0.7Ga0.3)Se-2 (CIGS) quaternary alloy target was prepared through spark plasma sintering (SPS) using Cu(In0.7Ga0.3)Se-2 single-phase powder which was compounded at 650 degrees C. The influence of sintering parameters, such as sintering temperature, holding time and sintering pressure on performance of the target was studied. The results show that the target is a Cu(In0.7Ga0.3)Se-2 single-phase when the sintering temperature is above 500 degrees C; the grain size increases, and both of relative density and resisitivity present a linear increase with the sintering temperature increasing. The grain size, relative density and resistivity also increase with prolonging the holding time. However, the relative density increases, while the resistivity decreases with the sintering pressure increasing. In conclusion, the resisitivity is 50 Omega.cm, and the relative density is 98%, when the sintering temperature is 600 degrees C, the sintering pressure is 30 MPa, and the holding time is 5 min.