Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

被引：10
|
作者：
Do, Woori [1 ]
Jin, Won-Beom [2 ]
Choi, Jungwan [1 ]
Bae, Seung-Muk [1 ]
Kim, Hyoung-June [1 ]
Kim, Byung-Kuk [3 ]
Park, Seungho [2 ]
Hwang, Jin-Ha [1 ]
机构：
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
[2] Hongik Univ, Dept Mech & Syst Design Engn, Seoul 121791, South Korea
[3] Viatron Technol, Kyeonggi Do 441811, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2014年 / 58卷
基金：
新加坡国家研究基金会;
关键词：
Boron; Flash lamp annealing; Ion activation; Polycrystalline Si thin films; DOPANT ACTIVATION; CRYSTALLIZATION; DIFFUSION; FABRICATION;
D O I：
10.1016/j.materresbull.2014.04.047
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：164 / 168
页数：5
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