Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements

被引：29
|
作者：
Heurlin, Magnus [1 ]
Hultin, Olof [1 ]
Storm, Kristian [1 ]
Lindgren, David [1 ]
Borgstrom, Magnus T. [1 ]
Samuelson, Lars [1 ]
机构：
[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden
来源：
NANO LETTERS | 2014年 / 14卷 / 02期
基金：
瑞典研究理事会;
关键词：
Nanowire; core-shell; doping; MOVPE; Hall effect; III-V NANOWIRES; SEMICONDUCTOR NANOWIRE; SILICON NANOWIRES; GROWTH; TRANSISTORS; ABSORPTION; DEVICES; LIGHT;
D O I：
10.1021/nl404039d
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.
引用
收藏
页码：749 / 753
页数：5
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