Influence of graphene on quality factor variation in a silicon ring resonator

被引：19

作者：

Kou, Rai ^{[1
,2
,3
]}

Tanabe, Shinichi ^{[4
]}

Tsuchizawa, Tai ^{[1
,2
]}

Yamamoto, Tsuyoshi ^{[2
]}

Hibino, Hiroki ^{[4
]}

Nakajima, Hirochika ^{[3
]}

Yamada, Koji ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

[3] Waseda Univ, Grad Sch Adv Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[4] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

关键词：

OPTICAL MODULATOR; TECHNOLOGY; FILMS;

D O I：

10.1063/1.4867472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selectively patterned graphene is integrated onto a silicon ring resonator to investigate the quality factor (Q factor) variation. The Q factor sharply decreases from 7900 to 1200 as the patterned graphene length increases from 0 to 20 mu m. A numerical estimation, which takes into account optical absorption by graphene, shows an exponential damping of the Q factor with increasing graphene length and is consistent with the experimental result. We expect these fundamental characterizations to be helpful in developing graphene-integrated silicon photonics applications. (C) 2014 AIP Publishing LLC.

引用

页数：5

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