Origin of the annealing-induced blue-shift in GaAsSbN

被引：0

作者：

Lin, Yan-Ting ^{[1
]}

Ma, Ta-Chun ^{[1
]}

Chen, Tsung-Yi ^{[1
]}

Lin, Hao-Hsiung ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

GaAsSbN; blue shift; absorption; PL; FTIR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of the thermal annealing on the optical and structural properties of dilute nitride GaAsSbN epilayers, coherently grown on GaAs substrates by gas-source molecular beam epitaxy, have been investigated. Blue shift in the energy gap of the samples was observed when the annealing temperature was higher than 750 degrees C. Through the analyses on the below energy gap absorption, photoluminescence, and GaN local vibration mode absorption of the samples, we attribute the blue shift to the improvement in the composition homogeneity and the change of the second-nearest-neighboring atoms to the N atoms.

引用

页码：96 / 99

页数：4

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