Effect of a biased probe on the afterglow operation of an ECR4 ion source

被引:2
|
作者
Hill, CE [1 ]
Küchler, D [1 ]
Wenander, F [1 ]
Wolf, BH [1 ]
机构
[1] CERN, PS Div, CH-1211 Geneva 23, Switzerland
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 2000年 / 71卷 / 02期
关键词
D O I
10.1063/1.1150314
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Various experiments have been performed on a 14.5 GHz ECR4 in order to improve the ion yield. The source runs in pulsed afterglow mode, and provides currents similar to 120 e mu A of Pb27+ to the CERN Heavy Ion Facility on an operational basis. In the search for higher beam intensities, the effects of a pulsed biased disk on axis at the injection side were investigated with different pulse timing and voltage settings. No proof for absolute higher intensities was seen for any of these modifications. However, the yield from a poorly tuned/low-performing source could be improved and the extracted pulse was less noisy with bias voltage applied. The fast response on the bias implies that increases/decreases are not due to ionization processes. A good tune for high yield of high charge states during the afterglow coincides with a high plasma potential. (C) 2000 American Institute of Physics. [S0034-6748(00)59702-0].
引用
收藏
页码:863 / 865
页数:3
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