Analysis of the VIS-NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE

被引：5
|
作者：
Habchi, M. M. [1 ]
Massoudi, I. [1 ]
Rebey, A. [1 ]
Ben Chaabane, R. [2 ]
El Jani, B. [1 ]
机构：
[1] Univ Monastir, Fac Sci, URHEA, Monastir, Tunisia
[2] Univ Monastir, Fac Sci, LPCI, Monastir, Tunisia
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 395卷
关键词：
Bismuth compounds; Crystal morphology; Refractive index; Metal organic vapor phase epitaxy; Semiconducting gallium arsenide; ENERGY ELECTRON-DIFFRACTION; OPTICAL-PROPERTIES; SEMICONDUCTOR SURFACES; LASER REFLECTOMETRY; (001)GAAS SURFACES; BAND STRUCTURE; BISMUTH-FILMS; GAAS; GAAS(110); TEMPERATURE;
D O I：
10.1016/j.jcrysgro.2014.03.001
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Bismuth films have been deposited onto (001) GaAs substrates by metal organic vapor phase epitaxy and ultra-high vacuum evaporation. The optical and morphological properties of the Bi/GaAs samples were investigated using spectral reflectance (SR) and atomic force microscopy. The real refractive index and the extinction coefficient of bismuth were determined in the wavelength range 400-1700 nm using theoretical analysis of in situ and ex situ SR measurements. Best simulations of SR data versus time and wavelength allow the decoupling of the effects On reflectivity of parameters such as bismuth film's thickness, roughness and temperature. In the near infrared domain, SR signals present a peak at around 0.9 eV which can be attributed to bismuth. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：26 / 30
页数：5
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