Phonon-assisted tunnelling in double quantum well structures

被引：10
|
作者：
Khan-ngern, S [1 ]
Larkin, IA [1 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
PHYSICS LETTERS A | 2000年 / 266卷 / 2-3期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/S0375-9601(99)00877-4
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We calculate the tunnelling rates for interwell transitions due to electron-longitudinal-optical phonon (LO-phonon) scattering in GaAs-AlGaAs DQW heterostructures starting from the Frohlich interaction and Fermi's golden rule. The rates are investigated as functions of the difference in energy between the E-1 level of the wider quantum well (QW1) and the E-1* level of the narrower quantum well (QW2). We also compare our calculations of the LO-phonon assisted tunnelling with the conventional resonant tunnelling. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：209 / 215
页数：7
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