GaAsHBT operating as integrated V- to W-band Gunn oscillator

被引：0
|
作者：
Rudolph, M [1 ]
Doerner, R [1 ]
Heymann, P [1 ]
机构：
[1] Ferdinand Braun Inst Hochstfrequenztech, FBH, D-12489 Berlin, Germany
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f(max) as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeterwave frequencies. The oscillation frequency of a single device can be tuned in the range of 4080 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.
引用
收藏
页码：1737 / 1740
页数：4
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